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| 10-FY06BIA080MF-M527E58 Datasheet, PDF (9/25 Pages) Vincotech – Low inductive 12mm flow1 package | |||
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Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
3000
dIrec/dt T
dIo/dt T
2500
2000
1500
1000
500
0
0
10
20
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
400
V
10
V
128
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
H-Bridge
FWD
10-FY06BIA080MF-M527E58
preliminary datasheet
30
I C (A)
40
MOSFET
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
FWD
100
10-1
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
t p (s)
10110
10-5
10-4
10-3
10-2
10-1
100
t p (s) 10110
At
D=
RthJH =
tp / T
0,83
K/W
At
D=
RthJH =
tp / T
0,83
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,03
0,10
0,33
0,26
0,08
0,04
Tau (s)
4,8E+00
1,1E+00
2,3E-01
8,5E-02
1,3E-02
1,0E-03
R (C/W)
0,03
0,10
0,33
0,26
0,08
0,04
Tau (s)
4,8E+00
1,1E+00
2,3E-01
8,5E-02
1,3E-02
1,0E-03
Copyright by Vincotech
9
Revision: 1
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