10-FY06BIA080MF-M527E58 Datasheet, PDF (2/25 Pages) Vincotech – Low inductive 12mm flow1 package

Tj=25°C, unless otherwise specified
Parameter
Input Boost Diode ( D3 , D4 )
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
H-Bridge MOSFET ( T3 , T4 , T5 , T6 )
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
H-Bridge Body Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
DC link Capacitor ( C1 )
Max.DC voltage
Thermal Properties
Storage temperature
Operation temperature under switching condition
Insulation Properties
Insulation voltage
Creepage distance
Clearance
10-FY06BIA080MF-M527E58
preliminary datasheet
Maximum Ratings
Symbol
Condition
Value
Unit
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
V_DS
I_D
I_Dpulse
P_tot
Vgs
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
Tc=25°C
T_h=80°C
T_c=80°C
600
V
20
A
24
57
A
46
W
70
175
°C
650
V
21
A
26
137
A
84
W
128
±30
V
150
°C
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
V_MAX
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
Tc=25°C
650
V
50
A
50
50
A
140
84
W
128
150
°C
630
V
T_stg
T_op
V_is
t=2s
DC voltage
-40…+125
°C
-40…+(Tjmax - 25)
°C
4000
V
min 12,7
mm
min 12,7
mm
Copyright by Vincotech
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