10-FY06BIA080MF-M527E58 Datasheet, PDF (15/25 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
0,20
0,15
0,10
0,05
0,00
At ⁰
10
20
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
2
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
30
25
20
15
10
5
0
0
10
20
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
2
Ω
10-FY06BIA080MF-M527E58
preliminary datasheet
INPUT BOOST
BOOST FWD
Q_{rr High T}
Q_{rr Low T}
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
0,2
0,15
0,1
BOOST FWD
Q_{rr Low T}
Q_{rr High T}
0,05
0
30
I C (A) ₄₀
0
5
10
At
Tj =
VR =
IF =
VGS =
25/125 °C
400
V
20
A
10
V
BOOST FWD
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
40
30
I_{RRM High T}
20
15
R Gon ( Ω )
20
BOOST FWD
10
0
30
I C (A) ₄₀
0
5
10
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
400
V
20
A
10
V
I_{RRM Low T}
I_{RRM High T}
15
R Gon ( Ω ) 20
Copyright by Vincotech
15
Revision: 1