10-FY06BIA080MF-M527E58 Datasheet, PDF (7/25 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1,00
0,10
0,01
0,00
0
10
20
With an inductive load at
T_j =
125
°C
V_CE =
400
V
V_GE =
10
V
R_gon =
128
Ω
R_goff =
2
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0
10
20
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
128
Ω
H-Bridge
10-FY06BIA080MF-M527E58
preliminary datasheet
MOSFET
t_don
t_r
t_doff
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1,00
0,10
0,01
t_f
0,00
30
I C (A) ₄₀
0
10
20
With an inductive load at
T_j =
125
°C
V_CE =
400
V
V_GE =
10
V
I_C =
20
A
MOSFET
t_doff
t_f
30
R G (Ω) ₄₀
FWD
t_{rr High T}
t_{rr Low T}
30
I C (A)
40
Copyright by Vincotech
7
Revision: 1