10-FY06BIA080MF-M527E58 Datasheet, PDF (4/25 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY06BIA080MF-M527E58
preliminary datasheet
Parameter
H-Bridge MOSFET ( T3 , T4 , T5 , T6 )
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Total gate charge
Gate to source charge
Gate to drain charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
H-Bridge Body Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
DC link Capacitor ( C1 )
C value
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
R_ds(on)
10
V_(GS)th
I_gss
20
I_dss
0
t_d(ON)
t_r
t_{d(OFF) Rgoff=2 Ω}
10
t_f
Rgon=128 Ω
E_on
E_off
Q_g
Q_gs
0/10
Q_gd
C_iss
C_oss f=1MHz
0
C_rss
R_thJH
R_thJC
Thermal grease
thickness≤50um
λ = 1 W/mK
43
Tj=25°C
Tj=125°C
96
164
mΩ
V_DS=V_GS 0,00176
Tj=25°C
Tj=125°C
3,5
4
4,5
V
0
Tj=25°C
Tj=125°C
100
nA
650
Tj=25°C
Tj=125°C
1000
nA
Tj=25°C
355
Tj=125°C
307
Tj=25°C
149
Tj=125°C
165
Tj=25°C
94
ns
400
20
Tj=125°C
Tj=25°C
98
4
Tj=125°C
5
Tj=25°C
2,24
Tj=125°C
Tj=25°C
3,73
0,01
mWs
Tj=125°C
0,01
170
480
26,3
Tj=25°C
25
nC
120
5030
25
Tj=25°C
215
pF
tbd.
0,83
K/W
0,55
V_F
I_RRM
t_rr
Q_rr Rgon=128 Ω
10
di(rec)max
/dt
E_rec
R_thJH
R_thJC
Thermal grease
thickness≤50um
λ = 1 W/mK
43
400
20
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,18
1,09
13
24
122
216
0,96
2,85
1469
2749
0,03
0,07
0,83
0,55
V
A
ns
μC
A/μs
mWs
K/W
C
47
nF
R
ΔR/R R100=1486 Ω
P
B_(25/50) Tol. ±3%
B_(25/100) Tol. ±3%
Tj=25°C
Tj=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
Ω
-5
+5
%
200
mW
2
mW/K
3950
K
3996
K
B
Copyright by Vincotech
4
Revision: 1