10-FY06BIA080MF-M527E58 Datasheet, PDF (1/25 Pages) Vincotech – Low inductive 12mm flow1 package

flowSOL 1 BI
Features
● Low inductive 12mm flow1 package
● Booster:
○ Dual boost topology
○ MOSFET 650V/70mOhm + SiC diode
○ Bypass rectifier
● Inverter:
○ H-bridge topology
○ MOSFET 650V/80mOhm CFD
● Integrated DC-capacitor
● Temperature sensor
Target Applications
● Solar Inverter:
Primary of high efficient HF transformer-based solar inver
Types
● 10-FY06BIA080MF-M527E58
10-FY06BIA080MF-M527E58
preliminary datasheet
650V/80mΩ
flow1 12mm housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
Bypass Diode ( D1 , D2 )
Repetitive peak reverse voltage
Forward current per diode
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
Input Boost MOSFET ( T1, T2 )
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
V_RRM
I_FAV
I_FSM
I²t
P_tot
T_jmax
DC current
t_p=10ms
T_j=T_jmax
T_h=80°C
T_c=80°C
T_j=25°C
T_h=80°C
T_c=80°C
V_DS
I_D
I_Dpulse
P_tot
V_GS
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
Value
Unit
1600
V
41
A
50
370
A
370
A²s
50
W
76
150
°C
650
V
22
A
27
150
A
78
W
117
±30
V
150
°C
Copyright by Vincotech
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Revision: 1