10-FY06BIA080MF-M527E58 Datasheet, PDF (5/25 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 1
Typical output characteristics
I_C = f(V_CE)
70
60
50
40
30
20
10
0
0
2
4
6
At
t_p =
T_j =
V_GE from
250
μs
25
°C
0 V to 20 V in steps of 2 V
H-Bridge
10-FY06BIA080MF-M527E58
preliminary datasheet
MOSFET
8
V CE (V)
10
Figure 2
Typical output characteristics
I_C = f(V_CE)
70
60
50
40
30
20
10
0
0
2
4
6
At
t_p =
T_j =
V_GE from
250
μs
125
°C
0 V to 20 V in steps of 2 V
MOSFET
8
V CE (V) ¹⁰
Figure 3
Typical transfer characteristics
I_C = f(V_GE)
30
25
20
15
10
5
0
0
At
t_p =
V_CE =
T_j = T_jmax-25°C
2
4
250
μs
10
V
MOSFET
Figure 4
Typical diode forward current as
a function of forward voltage
I_F = f(V_F)
80
FWD
60
40
T_j = 25°C
6
V GE (V)
8
20
T_j = T_jmax-25°C
0
0
At
t_p =
0,5
250
μs
T_j = 25°C
1
1,5
V F (V) ²
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5
Revision: 1