10-FY06BIA080MF-M527E58 Datasheet, PDF (6/25 Pages) Vincotech – Low inductive 12mm flow1 package

H-Bridge
10-FY06BIA080MF-M527E58
preliminary datasheet
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
8
6
4
2
0
0
10
20
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
400
V
10
V
128
Ω
2
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0
10
20
With an inductive load at
T_j =
25/125 °C
V_CE =
400
V
V_GE =
10
V
R_gon =
128
Ω
MOSFET
E_{on High T}
E_{on Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
0,30
0,25
0,20
0,15
MOSFET
E_{off High T}
E_{off Low T}
0,10
E_{off High T}
30
E_{off Low T}
I C (A) ⁴⁰
0,05
0,00
0
10
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
400
V
10
V
20
A
20
R_gon =
30
R goff (Ω)
40
128
Ω
FWD
E_{rec High T}
E_{rec Low T}
30
I C (A) ₄₀
Copyright by Vincotech
6
Revision: 1