10-FY06BIA080MF-M527E58 Datasheet, PDF (22/25 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY06BIA080MF-M527E58
preliminary datasheet
Switching Definitions H-Bridge MOSFET
Figure 5
H-Bridge MOSFET
Turn-off Switching Waveforms & definition of t_Eoff
200
%
E_off
150
100
50
V_{GE 90%}
0
t_Eoff
-50
-0,2
-0,15
-0,1
P_off (100%) =
E_off (100%) =
t_Eoff =
8,05
kW
0,01
mJ
0,13
μs
I_{C 1%}
P_off
-0,05 _{time (us)} 0
Figure 6
Turn-on Switching Waveforms & definition of t_Eon
250
H-Bridge MOSFET
%
P_on
200
150
E_on
100
50
V_{GE 10%}
0
-50
3,8
4
P_on (100%) =
E_on (100%) =
t_Eon =
4,2
8,05
3,68
0,98
t_Eon
4,4
4,6
kW
mJ
μs
V_{CE 3%}
4,8
5
time(us)
Figure 7
Gate voltage vs Gate charge (measured)
15
H-Bridge MOSFET
10
5
0
-5
-10
-10
10
V_GEoff =
V_GEon =
V_C (100%) =
I_C (100%) =
Q_g =
30
50
70
90
110
130
150
Qg (nC)
0
V
10
V
400
V
20
A
145,99 nC
Figure 8
Turn-off Switching Waveforms & definition of t_rr
120
%
I_d
80
t_rr
40
V_d
0
-40
H-Bridge FWD
fitted
I_{RRM 10%}
-80
-120
4,15
4,3
4,45
V_d (100%) =
I_d (100%) =
I_RRM (100%) =
t_rr =
400
V
20
A
-24
A
0,21
μs
I_{RRM 90%}
I_{RRM 100%}
4,6
time(us) ^4,75
Copyright by Vincotech
22
Revision: 1