10-FY06BIA080MF-M527E58 Datasheet, PDF (14/25 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 9
Typical switching times as a
function of collector current
t = f(I_D)
1
0,1
t_f
0,01
t_r
0,001
0
10
20
With an inductive load at
T_j =
125
°C
V_DS =
400
V
V_GS =
10
V
R_gon =
2
Ω
R_goff =
2
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,01
0,008
0,006
0,004
0,002
0
0
10
20
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
2
Ω
10-FY06BIA080MF-M527E58
preliminary datasheet
INPUT BOOST
BOOST MOSFET
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
t_doff
0,1
t_don
0,01
t_f
t_r
30
I D (A)
40
0,001
0
5
10
With an inductive load at
T_j =
125
°C
V_DS =
400
V
V_GS =
10
V
I_C =
20
A
BOOST MOSFET
t_doff
t_don
15
R G( Ω ) 20
BOOST FWD
t_{rr High T}
t_{rr Low T}
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,015
0,012
0,009
0,006
0,003
0
30
I C (A) 40
0
5
10
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
400
V
20
A
10
V
BOOST FWD
t_{rr High T}
t_{rr Low T}
15
R Gon ( Ω )
20
Copyright by Vincotech
14
Revision: 1