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BQ24187 Datasheet, PDF (8/44 Pages) Texas Instruments – 1A USB-OTG Support
bq24187
SLUSBM0 – APRIL 2014
Not Recommended for New Designs
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Electrical Characteristics (continued)
Circuit of Figure 6, VUVLO < VIN < VOVP and VIN > VBAT+VSLP, TJ = –40°C–125°C and TJ=25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
BATTERY-PACK NTC MONITOR
VHOT
VWARM
High temperature threshold
Warm temperature threshold
VCOOL
Cool temperature threshold
VCOLD
TSOFF
Low temperature threshold
TS Disable threshold
I2C COMPATIBLE INTERFACE
VTS falling, 2% VDRV Hysteresis
VTS falling, 2% VDRV Hysteresis
VTS rising, 2% VDRV Hysteresis
VTS rising, 2% VDRV Hysteresis
VTS rising, 4% VDRV Hysteresis
VIH
Input low threshold level
VIL
Input low threshold level
VOL
Output low threshold level
IBIAS
High-Level leakage current
OTG BOOST SUPPLY
VPULL-UP=1.8V, SDA and SCL
VPULL-UP=1.8V, SDA and SCL
IL=5mA, sink current
VPULL-UP=1.8V, SDA and SCL
IQBAT_ BOOST
Quiescent current during boost
mode (BAT TERMINAL)
2.7V<VBAT<4.5V, no switching
Boost voltage range for specified
boost operation
VIN_BOOST
Boost output voltage (to terminal
VBUS)
2.7V<VBAT<4.5V over line and load
IBO
Maximum output current for
boost
2.7V<VBAT<4.5V
BOOST_ILIM=1
BOOST_ILIM=0
IBLIMIT
Cycle by cycle current limit for
boost (measured at lowside FET)
2.7V<VBAT<4.5V
BOOST_ILIM=1
BOOST_ILIM=0
VBOOSTOVP
Over voltage protection threshold
for boost (IN terminal)
Signals fault and exits boost mode
VBURST(ENT)
Upper VIN voltage threshold to
enter burst mode (stop switching)
VBURST(EXIT)
Lower VBUS voltage threshold to
exit burst mode (start switching)
MIN
27.3
36.0
54.7
58.2
80
1.3
3.3
4.95
1000
500
5.8
5.1
4.9
TYP
30
38.3
56.4
60
5.05
4
2
6
5.2
5
MAX UNIT
32.6
41.2
58.1
61.8
85
%VDRV
%VDRV
%VDRV
%VDRV
%VDRV
V
0.4
V
0.4
V
1
μA
100
µA
4.5
V
5.2
V
mA
A
6.2
V
5.3
V
5.1
V
8
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