BQ24187 Datasheet, PDF (7/44 Pages) Texas Instruments – 1A USB-OTG Support

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Not Recommended for New Designs
bq24187
SLUSBM0 – APRIL 2014
Electrical Characteristics (continued)
Circuit of Figure 6, V_UVLO < V_IN < V_OVP and V_IN > V_BAT+V_SLP, T_J = –40°C–125°C and T_J=25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
INPUT CURRENT LIMITING
I_{IN_USB}
Input current limiting threshold
V_{IN_DPM}
Input based DPM threshold
range
V_{IN_DPM} threshold Accuracy
VDRV BIAS REGULATOR
USB charge mode,
V_IN = 5V,
Current pulled from SW
I_INLIM = USB100
I_INLIM = USB500
I_INLIM = USB150
I_INLIJM = USB900
I_INLIM = 1.5A
I_INLIM = 2.0A
Charge mode, programmable via I²C
V_DRV
Internal bias regulator voltage
I_DRV
DRV Output current
V_{DO_DRV}
DRV Dropout voltage (V_IN –
V_DRV)
STATUS OUTPUT (STAT, INT)
V_IN>5V
I_IN = 1A, V_IN = 4.2V, I_DRV = 10mA
V_OL
Low-level output saturation
voltage
I_O = 5 mA, sink current
I_IH
High-level leakage current
INPUT TERMINALS (CD, PSEL)
V_/CHG = V_/PG = 5V
V_IL
Input low threshold
V_IH
Input high threshold
R_PULLDOWN
CD pull-down resistance
PROTECTION
CD only
V_UVLO
V_{UVLO_HYS}
V_SLP
V_{SLP_HYS}
V_OVP
IC active threshold voltage
IC active hysteresis
Sleep-mode entry threshold, V_IN-
V_BAT
Sleep-mode exit hysteresis
Input supply OVP threshold
voltage
V_IN rising
V_IN falling from above V_UVLO
2.0 V ≤ V_BAT ≤ V_BATREG, V_IN falling
IN rising, 100mV hysteresis
V_BOVP
Battery OVP threshold voltage
V_BAT threshold over V_OREG to turn off charger
during charge
V_{BOVP_HYS}
I_CbCLIMIT
T_SHTDWN
T_REG
PWM
R_{DSON_Q1}
R_{DSON_Q2}
V_BOVP hysteresis
Cycle-by-cycle current limit
Thermal trip
Thermal hysteresis
Thermal regulation threshold
Safety Timer Accuracy
Internal top MOSFET on-
resistance
Internal bottom N-channel
MOSFET on-resistance
Lower limit for V_BAT falling from above V_BOVP
V_CS+ shorted
Charge current begins to cut off
YFF Package: Measured from IN to SW
RGE Package: Measured from IN to SW
YFF Package: Measured from SW to PGND
RGE Package: Measured from SW to PGND
MIN
90
450
125
800
1425
1850
4.2
–3%
4.3
0
TYP
95
475
140
850
1500
2000
4.8
MAX UNIT
100
500
150
mA
900
1575
2200
4.76
V
3%
5.3
V
10
mA
450
mV
0.4
V
1
µA
0.4
V
1.4
V
100
kΩ
3.2
0
40
6.25
1.03 ×
V_BATREG
4.1
–20%
3.3
300
40
100
6.5
1.05 ×
V_BATREG
1
4.5
150
10
125
3.4
120
190
6.75
1.07 ×
V_BATREG
4.9
V
mV
mV
mV
V
V
% of
V_BATREG
A
°C
°C
20%
75
120
mΩ
80
135
mΩ
75
115
mΩ
80
135
mΩ
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