BQ24187 Datasheet, PDF (29/44 Pages) Texas Instruments – 1A USB-OTG Support

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Not Recommended for New Designs
bq24187
SLUSBM0 – APRIL 2014
Table 6. Battery Termination/Fast Charge Current Register (Read/Write)
Memory Location: 04, Reset State: 0010 1010
BIT
NAME
READ/WRITE
FUNCTION
B7 (MSB)
B6
B5
B4
B3
B2
B1
B0 (LSB)
V_ICHRG4
V_ICHRG3
V_ICHRG2
V_ICHRG1
V_ICHRG0
V_ITERM2
V_ITERM1
V_ITERM0
Read/Write
Read/Write
Read/Write
Read/Write
Read/Write
Read/Write
Read/Write
Read/Write
Charge current: 1600mA – (default 0)
Charge current: 800mA— (default 0)
Charge current: 400mA—(default 1)
Charge current: 200mA— (default 0)
Charge current: 100mA (default 1)
Termination current sense: 200mA (default 0)
Termination current sense voltage: 100mA (default 1)
Termination current sense voltage: 50mA (default 0)
I_CHRG Bits
(Charge Current Regulation
Threshold setting)
Use I_CHRG bits to set the charge current regulation threshold. The charge
current is programmable from 500mA to 2A in 100mA steps. The default is
1A. The I_CHARGE is calculated using the following equation:
I_CHARGE = 500 mA + I_CHRGCODE× 50 mA
ITERM Bits
(Charge Current Termination
Threshold setting)
Use I_TERM bits to set the charge current termination threshold. The
termination threshold is programmable from 50mA to 300mA in 50mA steps.
The default is 150mA. The I_TERM is calculated using the following equation:
I_TERM = 50 mA + I_TERMCODE × 50 mA
Any setting programmed above 300mA selects the 300mA setting.
Table 7. V_IN-DPM Voltage/ DPPM Status Register
Memory location: 05, Reset state: xx00 x000
BIT
B7 (MSB)
B6
NAME
NA
DPM_STATUS
READ/WRITE
Read Only
Read Only
B5
LOW_CHG
Read/Write
B4
NA
Read Only
B3
CD_STATUS
Read Only
B2
V_INDPM2
Read/Write
B1
V_INDPM1
Read/Write
B0 (LSB)
V_INDPM0
Read/Write
V_IN-DPM voltage offset is 4.2V.
FUNCTION
NA
0 – V_IN-DPM mode is not active
1 – V_IN-DPM mode is active
0 – Normal charge current set by 04h
1 – Low charge current setting 300mA (default 0)
NA
0 – CD low, IC enabled
1 – CD high, IC disabled
Input V_IN-DPM voltage: V_DPMOFF + 8% (default 0)
Input V_IN-DPM voltage: V_DPMOFF + 4% (default 0)
Input V_IN-DPM voltage: V_DPMOFF + 2% (default 0)
LOW_CHG Bit
(Low Charge Mode
Enable)
The LOW_CHG bit is used to reduce the charge current to a minimum current. This
feature is used by systems where battery NTC is monitored by the host and requires
a reduced charge current setting or by systems that need a “preconditioning” current
for low battery voltages. Write a “1” to this bit to charge at 300mA. Write a “0” to this
bit to charge at the programmed charge current.
V_INDPM Bits
(VINDPM Threshold
setting)
Use V_INDPM bits to set the V_INDPM regulation threshold. The V_INDPM threshold is
calculated using the following equation:
V_INDPM = V_{INDPM_OFF} + V_INDPMCODE × 2% ×V_{INDPM_OFF}
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