LMG1205 Datasheet, PDF (6/24 Pages) Texas Instruments – 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs

LMG1205
SNOSD37 – MARCH 2017
Electrical Characteristics (continued)
Specifications are T_J = 25°C. Unless otherwise specified: V_DD = V_HB = 5 V, V_SS = V_HS = 0 V.
No load on LOL and HOL or HOH and HOL⁽¹⁾.
PARAMETER
TEST CONDITIONS
MIN
LOW- and HIGH-SIDE GATE DRIVER
V_OL Low-level output voltage
High-level output voltage
V_OH V_OH = VDD – LOH
or V_OH = HB – HOH
I_OHL Peak source current
I_OLL Peak sink current
I_HOL = I_LOL = 100 mA
I_HOH = I_LOH = 100 mA
HOH, LOH = 0 V
HOL, LOL = 5 V
T_J = 25°C
T_J = –40°C to 125°C
T_J = 25°C
T_J = –40°C to 125°C
6.6 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
t_LPHL LO turnoff propagation delay
t_LPLH LO turnon propagation delay
t_HPHL HO turnoff propagation delay
t_HPLH
t_MON
t_MOFF
t_HRC
t_LRC
t_HFC
t_LFC
t_PW
HO turnon propagation delay
Delay matching
LO on and HO off
Delay matching
LO off and HO on
HO rise time (0.5 V – 4.5 V)
LO rise time (0.5 V – 4.5 V)
HO fall time (0.5 V – 4.5 V)
LO fall time (0.5 V – 4.5 V)
Minimum input pulse width
that changes the output
LI falling to LOL falling
LI rising to LOH rising
HI falling to HOL falling
HI rising to HOH rising
T_J = 25°C
T_J = –40°C to 125°C
T_J = 25°C
T_J = –40°C to 125°C
C_L = 1000 pF
C_L = 1000 pF
C_L = 1000 pF
C_L = 1000 pF
T_J = 25°C
T_J = –40°C to 125°C
T_J = 25°C
T_J = –40°C to 125°C
T_J = 25°C
T_J = –40°C to 125°C
T_J = 25°C
T_J = –40°C to 125°C
t_BS
Bootstrap diode
reverse recovery time
I_F = 100 mA, I_R = 100 mA
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TYP MAX UNIT
0.06
V
0.1
0.21
V
0.31
1.2
A
5
A
TYP
MAX UNIT
33.5
ns
50
35
ns
50
33.5
ns
50
35
ns
50
1.5
ns
8
1.5
ns
8
7
ns
7
ns
3.5
ns
3.5
ns
10
ns
40
ns
LI
HI
LO
HO
t_MON
6
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LI
HI
t_HPLH
t_LPLH
t_HPHL
t_LPHL
LO
HO
t_MOFF
Figure 1. Timing Diagram
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