LMG1205 Datasheet, PDF (5/24 Pages) Texas Instruments – 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs

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6.5 Electrical Characteristics
Specifications are T_J = 25°C. Unless otherwise specified: V_DD = V_HB = 5 V, V_SS = V_HS = 0 V.
No load on LOL and HOL or HOH and HOL⁽¹⁾.
PARAMETER
TEST CONDITIONS
MIN
SUPPLY CURRENTS
I_DD VDD quiescent current
I_DDO VDD operating current
I_HB Total HB quiescent current
I_HBO Total HB operating current
I_HBS HB to VSS quiescent current
I_HBSO HB to VSS operating current
INPUT PINS
LI = HI = 0 V, V_DD = V_HB = ^TJ ^{= 25°C}
4V
T_J = –40°C to 125°C
f = 500 kHz
T_J = 25°C
T_J = –40°C to 125°C
LI = HI = 0 V, V_DD = V_HB = ^TJ ^{= 25°C}
4V
T_J = –40°C to 125°C
f = 500 kHz
T_J = 25°C
T_J = –40°C to 125°C
HS = HB = 80 V
T_J = 25°C
T_J = –40°C to 125°C
f = 500 kHz
T_J = 25°C
T_J = –40°C to 125°C
V_IR Input voltage threshold
V_IF Input voltage threshold
V_IHYS Input voltage hysteresis
R_I
Input pulldown resistance
UNDERVOLTAGE PROTECTION
Rising edge
Falling edge
T_J = 25°C
T_J = –40°C to 125°C
T_J = 25°C
T_J = –40°C to 125°C
1.89
T_J = 25°C
T_J = –40°C to 125°C
1.48
100
V_DDR VDD rising threshold
T_J = 25°C
T_J = –40°C to 125°C
3.2
V_DDH VDD threshold hysteresis
V_HBR HB rising threshold
T_J = 25°C
T_J = –40°C to 125°C
2.5
V_HBH HB threshold hysteresis
BOOTSTRAP DIODE AND CLAMP
V_DL Low-current forward voltage
V_DH High-current forward voltage
R_D
Dynamic resistance
HB-HS clamp regulation voltage
I_VDD-HB = 100 µA
I_VDD-HB = 100 mA
I_VDD-HB = 100 mA
T_J = 25°C
T_J = –40°C to 125°C
T_J = 25°C
T_J = –40°C to 125°C
T_J = 25°C
T_J = –40°C to 125°C
T_J = 25°C
T_J = –40°C to 125°C
4.5
(1) Parameters that show only a typical value are ensured by design and may not be tested in production.
LMG1205
SNOSD37 – MARCH 2017
TYP MAX UNIT
0.09
mA
0.12
2
mA
3
0.10
mA
0.12
1.5
mA
2.5
0.1
µA
8
0.4
mA
1
2.06
V
2.18
1.66
V
1.76
400
mV
200
kΩ
300
3.8
V
4.5
0.2
V
3.2
V
3.9
0.2
V
0.45
V
0.65
0.9
V
1
1.85
Ω
3.6
5
V
5.25
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