LMG1205 Datasheet, PDF (4/24 Pages) Texas Instruments – 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs

LMG1205
SNOSD37 – MARCH 2017
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)⁽¹⁾
VDD to VSS
HB to HS
LI or HI input
LOH, LOL output
HOH, HOL output
HS to VSS
HB to VSS
Operating junction temperature
Storage temperature, T_stg
MIN
–0.3
–0.3
–0.3
–0.3
V_HS – 0.3
–5
0
–55
MAX
7
7
15
VDD +0.3
V_HB +0.3
93
100
150
150
UNIT
V
V
V
V
V
V
V
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾
V_(ESD) Electrostatic discharge _{Charged-device model (CDM), per JEDEC specification JESD22-C101(2)}
VALUE
±1000
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VDD
LI or HI input
HS
HB
HS slew rate
Operating junction temperature
MIN
4.5
0
–5
V_HS + 4
–40
NOM
MAX
5.5
14
90
V_HS + 5.5
50
125
UNIT
V
V
V
V
V/ns
°C
6.4 Thermal Information
THERMAL METRIC⁽¹⁾
LMG1205
YFX (DSBGA)
UNIT
12 PINS
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
76.8
°C/W
0.6
°C/W
12.0
°C/W
1.6
°C/W
12.0
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
4
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