GC6016 Datasheet, PDF (6/46 Pages) Texas Instruments – Wideband Transmit-Receive Digital Signal Processors

GC6016
SLWS227A – NOVEMBER 2010 – REVISED MARCH 2011
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beAGC after the DDC is part of the baseband interface. Static gain is applied in the BB block for both the DDC
output and DUC input.
The receiver block provides dc offset correction, front-end AGC, real-to-complex conversion, complex mixing,
decimating filters, a complex equalizer, and a blind RX IQ imbalance correction function.
The CFR block reduces the peak-to-average ratio (PAR) of complex, arbitrary TX signals. Reducing the PAR of
the TX signal allows wireless-infrastructure (WI) base stations and repeaters to use smaller and lower-cost
multi-carrier power amplifiers (MCPAs).
In WI applications, the GC6016 meets multi-carrier 3G and 4G performance standards (PCDE, composite EVM,
and ACLR) at PAR levels down to 6 dB for WCDMA and 7 dB for LTE. The GC6016 integrates easily into the
transmit/receive signal chain between Texas Instruments’ high-performance data converters and baseband
processors such as the TI TMS320C64xx family. In wireless repeater applications, the GC6016 can provide
seamless interfaces to TI data converters, along with receive and transmit filtering, DDC, and DUC functions.
The GC6016 is extremely flexible and can be used in system architectures with different signal types and
TX-by-RX antenna configurations such as 2×2, 2×4, 4×4, and 4×8.
The GC6016 EVM system provides an example sector transmit-receive signal chain solution, from the
multi-carrier baseband to the RF antenna.
ABSOLUTE MAXIMUM RATINGS
over recommended operating free-air temperature range (unless otherwise noted)⁽¹⁾
V_DD
V_DDA
V_DDS
V_DDSHV
V_IN
T_stg
Core supply voltage
PLL analog voltage
Digital supply voltage for TX
Digital supply voltage
Input voltage (under/overshoot)
Clamp current for an input/output
Storage temperature
ESD classification
Class 2 (2.5 kV HBM, 500 V CDM, 150 V MM)
Moisture sensitivity
Moisture sensitivity Class 3 (1 week floor life at 30°C / 60% H)
MIN
–0.3
–0.3
–0.3
–0.3
–0.5
–20
–65
MAX
1.32
2
2
3.6
V_DDSHV + 0.5
20
140
UNIT
V
V
V
V
V
mA
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6
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