BQ24157S Datasheet, PDF (5/45 Pages) Texas Instruments – Full USB Compliance and USB-OTG Support

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bq24157S
SLUSB76B – FEBRUARY 2013 – REVISED MAY 2015
7.5 Electrical Characteristics
Circuit of Figure 28, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (CD = 0), T_J = –40°C to 125°C, T_J = 25°C for typical
values (unless otherwise noted)
INPUT CURRENTS
PARAMETER
I_(VBUS)
VBUS supply current control
I_lgk
Leakage current from battery to VBUS pin
Battery discharge current in high impedance
mode, (CSIN, CSOUT, SW pins)
VOLTAGE REGULATION
V_(OREG)
Output regulation voltage programable range
Voltage regulation accuracy
CURRENT REGULATION (FAST CHARGE)
I_O(CHARGE)
Output charge current programmable range
Low charge current (default after POR in 15
min mode)
Regulation accuracy of the voltage across
R_(SNS) (for charge current regulation)
V_(IREG) = I_O(CHARGE) × R_(SNS)
WEAK BATTERY DETECTION
V_(LOWV)
Weak battery voltage threshold programmable
range^{2 (1)}
Weak battery voltage accuracy
Hysteresis for V_(LOWV)
Deglitch time for weak battery threshold
CD, OTG, AND SLRST PIN LOGIC LEVEL
V_IL
Input low threshold level
V_IH
Input high threshold level
I_(bias)
Input bias current
CHARGE TERMINATION DETECTION
I_(TERM)
Termination charge current programmable
range
Deglitch time for charge termination
Regulation accuracy for termination current
across R_(SNS)
V_{(IREG_TERM)} = I_O(TERM) × R_(SNS)
BAD ADAPTOR DETECTION
V_IN(min)
Input voltage lower limit
Deglitch time for VBUS rising above V_IN(min)
Hysteresis for V_IN(min)
I_SHORT
Current source to GND
t_INT
Detection Interval
INPUT BASED DYNAMIC POWER MANAGEMENT
V_{IN_DPM}
Input Voltage DPM threshold programmable
range
VIN DPM threshold accuracy
TEST CONDITIONS
VBUS > VBUS(min), PWM switching
VBUS > VBUS(min), PWM not switching
0°C < T_J < 85°C, CD = 1 or HZ_MODE = 1
0°C < T_J < 85°C, V_(CSOUT) = 4.2 V, high impedance
mode, VBUS = 0 V
0°C < T_J < 85°C, V_(CSOUT) = 4.2 V, high impedance
mode, V = 0 V, SCL, SDA, OTG = 0 V or 1.8 V
Operating in voltage regulation, programmable
T_A = 25°C
T_A = -40°C to 125°C
V_(LOWV) ≤ V_(CSOUT) < V_(OREG),
VBUS > V_(SLP), R_(SNS) = 68 mΩ, LOW_CHG = 0,
Programmable
V_LOWV ≤ V_CSOUT < V_OREG, VBUS > V_SLP,
R_SNS= 68 mΩ, LOW_CHG = 1, OTG = High
V_LOWV ≤ V_CSOUT < V_OREG, VBUS > V_SLP,
R_SNS= 68 mΩ, LOW_CHG = 0, OTG = High
37.4 mV ≤ V_(IREG)< 44.2 mV
44.2 mV ≤ V_(IREG)
Adjustable using I²C control
Battery voltage falling
Rising voltage, 2-mV overdrive, t_RISE = 100 ns
Voltage on control pin is 5 V
V_(CSOUT) > V_(OREG) – V_(RCH),
VBUS > V_(SLP), R_(SNS) = 68 mΩ, programmable
Both rising and falling, 2-mV overdrive,
t_RISE, t_FALL = 100 ns
3.4 mV ≤ V_{(IREG_TERM)} ≤ 6.8 mV
6.8 mV < V_{(IREG_TERM)} ≤ 17 mV
17 mV < V_{(IREG_TERM)} ≤ 27.2 mV
Bad adaptor detection
Rising voltage, 2-mV overdrive, t_RISE = 100 ns
Input voltage rising
During bad adaptor detection
Input power source detection
MIN TYP MAX UNIT
10
mA
5
15
23 μA
5 μA
23 μA
3.5
–0.5%
–1%
4.44
V
0.5%
1%
550
1250 mA
–3.5%
–3%
325
350
mA
550
569
3.5%
3%
3.4
–5%
100
30
3.7
V
5%
mV
ms
0.4
V
1.3
V
1.0 µA
50
–15%
–10%
–5.5%
400 mA
30
ms
15%
10%
5.5%
3.6
3.8
4.0
V
30
ms
100
200 mV
20
30
40 mA
2
s
4.2
–3%
4.76
V
1%
(1) While in DEFAULT mode, if a battery that is charged to a voltage higher than this voltage is inserted, the charger enters Hi-Z mode and
awaits I²C commands.
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