BQ2019PW Datasheet, PDF (5/27 Pages) Texas Instruments – ADVANCED BATTERY MONITORIC

bq2019
ADVANCED BATTERY MONITOR IC
SLUS465E – DECEMBER 1999 – REVISED FEBRUARY 2003
VFC characteristics over recommended operating temperature and supply voltage (unless
otherwise noted)
PARAMETER
Input voltage
Charge/discharge gain
Supply voltage gain coefficient
Temperature gain coefficient
Integrated nonlinearity
Offset voltage
Compensated offset
TEST CONDITIONS
Temperature = 25°C,
–100 V < VSR < 100 mV
VCC = 3.6 V
–100 V < VSR < 100 mV
At calibrated temperature and voltage
2.8 V ≤ VCC ≤ 4.2 V
MIN
–100
89
–500
–10
–25
TYP
90.5
0.5
0.005
0.2%
–40
0
MAX
100
92
0.5%
500
10
25
UNIT
mV
Hz/V
%/V
%/°C
µV
µV
flash memory characteristics over recommended operating temperature and supply voltage
(unless otherwise noted)
PARAMETER
Data retention
Flash programming write-cycles
Byte programming time
RAM-to-flash block programming time
Block-erase time
TEST CONDITIONS
MIN TYP
10000
MAX
5
90
1520
1520
UNIT
Years
Cycles
µs
µs
µs
Standard serial communication (HDQ) timing specification over recommended operating
temperature and supply voltage (unless otherwise noted) (see Figures 1 and 2)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
t(B)
Break timing
190
µs
t(BR)
Break recovery time
40
µs
t(CYCH)
Host bit window
190
ns
t(HW1)
Host sends 1
32
50 µs
t(HW0)
Host sends 0
100
145 µs
t(RSPS)
bq2019 to host response
190
320 µs
t(CYCD)
bq2019 bit window
190
250 µs
t(start-detect) See Note 1
5
ns
t(DW1)
bq2019 sends 1
32
50 µs
t(DW0)
bq2019 sends 0
80
145 µs
NOTE 1: The HDQ engine of the bq2019 interests a 5-ns or longer glitch on HDQ as a bit start. A sufficient number of glitches 5 ns or longer could
result in incorrect data being written to the device. The HDQ line should be properly deglitched to ensure that this does not occur.
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