DAC8551IADGKRG4 Datasheet, PDF (13/26 Pages) Texas Instruments – 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT

DAC8551
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SLAS429B – APRIL 2005 – REVISED OCTOBER 2006
TYPICAL CHARACTERISTICS: V_DD = 2.7 V (continued)
At T_A = +25°C, unless otherwise noted.
HALF-SCALE SETTLING TIME: 2.7V FALLING EDGE
GLITCH ENERGY: 2.7V, 1LSB STEP, RISING EDGE
Trigger Pulse 2.7V/div
V_DD = 2.7V
V_REF = 2.5V
From Code: CFFF
To Code: 4000
Falling
Edge
0.5V/div
Zoomed Falling Edge
1mV/div
Time (2ms/div)
Figure 38.
GLITCH ENERGY: 2.7V, 1LSB STEP, FALLING EDGE
V_DD = 2.7V
V_REF = 2.5V
From Code: 7FFF
To Code: 8000
Glitch: 0.08nV-s
Time (400ns/div)
Figure 39.
GLITCH ENERGY: 2.7V, 16LSB STEP, RISING EDGE
V_DD = 2.7V
V_REF = 2.5V
From Code: 8000
To Code: 7FFF
Glitch: 0.16nV-s
Measured Worst Case
Time (400ns/div)
Figure 40.
GLITCH ENERGY: 2.7V, 16LSB STEP, FALLING EDGE
V_DD = 2.7V
V_REF = 2.5V
From Code: 8010
To Code: 8000
Glitch: 0.12nV-s
Time (400ns/div)
Figure 42.
V_DD = 2.7V
V_REF = 2.5V
From Code: 8000
To Code: 8010
Glitch: 0.04nV-s
Time (400ns/div)
Figure 41.
GLITCH ENERGY: 2.7V, 256LSB STEP, RISING EDGE
V_DD = 2.7V
V_REF = 2.5V
From Code: 8000
To Code: 80FF
Glitch: Not Detected
Theoretical Worst Case
Time (400ns/div)
Figure 43.
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