MSP430F2619S-HT Datasheet, PDF (71/90 Pages) Texas Instruments – MIXED SIGNAL MICROCONTROLLER

MSP430F2619S-HT
www.ti.com
SLAS697B – MARCH 2010 – REVISED JUNE 2011
Flash Memory – Electrical Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
V_CC
MIN TYP
V_{CC(PGM/ERASE)}
f_FTG
I_PGM
I_ERASE
t_CPT
t_CMErase
Program and erase supply voltage
Flash timing generator frequency
Supply current from V_CC during program
Supply current from V_CC during erase
Cumulative program time
Cumulative mass erase time
Program/Erase endurance
See ⁽¹⁾
2.2 V/3.6 V
2.2 V/3.6 V
2.2 V/3.6 V
2.2 V/3.6 V
2.2
257
3
3
20
10⁴ 10⁵
t_Retention
t_Word
t_{Block, 0}
t_{Block, 1-63}
t_{Block, End}
t_{Mass Erase}
t_{Seg Erase}
Data retention duration
Word or byte program time
Block program time for 1^st byte or word
Block program time for each additional byte or
word
Block program end-sequence wait time
Mass erase time
Segment erase time
T_J = 25°C
See ⁽²⁾
See ⁽²⁾
See ⁽²⁾
See ⁽²⁾
See ⁽²⁾
See ⁽²⁾
100
35
30
21
6
10593
4819
MAX
3.6
476
5
7
10
UNIT
V
kHz
mA
mA
ms
ms
cycles
years
t_FTG
t_FTG
t_FTG
t_FTG
t_FTG
t_FTG
(1) The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2) These values are hardwired into the Flash Controller's state machine (t_FTG = 1/f_FTG).
30
25
20
15
10
5
0
85 90 95 100 105 110 115 120 125 130 135 140 145 150
Junction Temperature - T_J (C)
Figure 52. Flash Data Retention vs Junction Temperature
Copyright © 2010–2011, Texas Instruments Incorporated
71