MB84VD23381HJ Datasheet, PDF (8/56 Pages) SPANSION – 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM

MB84VD23381HJ-70
s DEVICE BUS OPERATIONS
Operation*^1, *²
CEf CE1r CE2r OE WE
LB
UB
A21 to
A0
DQ7 to
DQ0
DQ15 to
DQ8
RESET
WP/
ACC*⁹
Full Standby
H H H X X X X X High-Z High-Z H
X
Output Disable*³
HL
H H H X X X*⁸ High-Z High-Z H
X
LH
Read from Flash*⁴
L H H L H X X Valid DOUT DOUT
H
X
Write to Flash
L H H H L X X Valid DIN
DIN
H
X
Read from FCRAM*¹⁰
H L H L H L*⁷ L*⁷ Valid DIN
DIN
H
X
FCRAM No Read
H L H L H H H Valid High-Z High-Z H
X
LL
DIN
DIN
Write to FCRAM
H L H H L H L Valid High-Z DIN
H
X
LH
DIN High-Z
FCRAM No Write
H L H H L H H Valid High-Z High-Z H
X
Flash Temporary Sector
Group Unprotection*⁵
X X X XXX X X
X
X
VID
X
Flash Hardware Reset
X H H X X X X X High-Z High-Z L
X
Flash Boot Block Sector
Write Protection
X X X XXX X X
X
X
X
L
FCRAM Power Down*⁶
X X L X X X X X High-Z High-Z X
X
Legend : L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High Impedance.
See DC Characteristics for voltage levels.
*1 : Other operations except for indicated this column are inhibited.
*2 : Do not apply for a following state two or more on the same time;
1) CEf = VIL
2) CE1r = VIL and CE2r = VIH
*3 : FCRAM Output Disable mode should not be kept longer than 1 µs.
*4 : WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
*5 : It is also used for the extended sector group protections.
*6 : FCRAM Power Down mode can be entered from Standby state and all DQ pins are in High-Z state.
*7 : Either or both LB and UB must be Low for Read operation.
*8 : Can be either VIL or VIH but must be valid before FCRAM Read or Write.
*9 : Protect “ outer most “ 2 × 8K bytes ( 4 words ) on both ends of the boot block sectors.
*10 : FCRAM Byte control at Read mode is not supported.
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