MB84VD23381HJ Datasheet, PDF (23/56 Pages) SPANSION – 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM

MBVD23381HJ-70
2. ELECTRICAL CHARACTERISTICS (AC Characteristics)
• Read Only Operations Characteristics (Flash)
Parameter
Symbol
Condition
JEDEC Standard
Read Cycle Time
tAVAV
tRC
—
Address to Output Delay
tAVQV
tACC
CEf = VIL
OE = VIL
Chip Enable to Output Delay
tELQV
tCEf
OE = VIL
Output Enable to Output Delay
tGLQV
tOE
—
Chip Enable to Output High-Z
tEHQZ
tDF
—
Output Enable to Output High-Z
tGHQZ
tDF
—
Output Hold Time From Addresses,
CEf or OE, Whichever Occurs First
tAXQX
tOH
—
RESET Pin Low to Read Mode
—
tREADY
—
Note : Test Conditions– Output Load : 1 TTL gate and 30 pF
Input rise and fall times : 5 ns
Input pulse levels : 0.0 V or VCCf
Timing measurement reference level
Input : 0.5 × VCCf
Output : 0.5 × VCCf
Value (Note)
Unit
Min
Max
70
—
ns
—
70
ns
—
70
ns
—
30
ns
—
25
ns
—
25
ns
0
—
ns
—
20
µs
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