MB84VD23381HJ Datasheet, PDF (10/56 Pages) SPANSION – 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM

MB84VD23381HJ-70
s ELECTRICAL CHARACTERISTICS (DC Characteristics)
Parameter
Input Leakage Current
Output Leakage Current
RESET Inputs Leakage Current
Flash VCC Active Current
(Read) *¹
Flash VCC Active Current
(Program/Erase) *²
Flash VCC Active Current
(Read-While-Program) *⁵
Flash VCC Active Current
(Read-While-Erase) *⁵
Flash VCC Active Current
(Erase-Suspend-Program)
WP/ACC Acceleration
Program Current
Flash VCC Current (Standby)
Flash VCC Current (Standby,Reset)
Flash VCC Current
(Automatic Sleep Mode)*³
FCRAM VCC Active Current*⁸
FCRAM VCC Standby Current*⁸
FCRAM VCC Power Down Current
Input Low Level
Input High Level
Sym-
bol
Conditions
ILI
ILO
ILIT
ICC1f
VIN = VSS to VCCf, VCCr
VOUT = VSS to VCCf, VCCr, Output Disable
VCCf = VCCf Max, RESET = 12.5 V
CEf = VIL,
OE = VIH
tCYCLE =5 MHz
tCYCLE =1 MHz
Value
Unit
Min Typ Max
–1.0 — +1.0 µA
–1.0 — +1.0 µA
— — 35 µA
— — 18 mA
— — 4 mA
ICC2f CEf = VIL, OE = VIH
— — 35 mA
ICC3f CEf = VIL, OE = VIH
— — 53 mA
ICC4f CEf = VIL, OE = VIH
— — 53 mA
ICC5f CEf = VIL, OE = VIH
— — 40 mA
IACC VCCf = VCCf Max, WP/ACC = VACC Max
— — 20 mA
VCCf = VCCf Max, CEf = VCCf ± 0.3 V,
ISB1f RESET= VCCf ± 0.3 V,
—
WP/ACC = VCCf ± 0.3 V
ISB2f VCCf = VCCf Max, RESET= VSS ± 0.3 V
—
VCCf = VCCf Max, CEf= VSS ± 0.3 V,
ISB3f RESET= VCCf ± 0.3 V,
—
VIN = VCCf ± 0.3 V or VSSf ± 0.3 V
ICC1r VCCr = VCCr Max,
tRC / tWC = Min —
CE1r = VIL, CE2r = VIH,
ICC2r ^{VIN = VCCr – 0.5 V or VIL,} tRC / tWC = 1 µs —
IOUT = 0 mA*⁷
VCCr = VCCr Max,
ISB1r VIN < 0.2 V or VIN > VCCr – 0.2 V,
—
CE1r > VCCr – 0.2 V, CE2r > VCCr – 0.2 V
IDDPSr
VCCr = VCCr Max, CE2r < 0.2 V,
VIN = VIH or VIL
—
VIL
—
–0.3
VIH
—
2.2
1 5 µA
1 5 µA
1 5 µA
— 20
mA
—3
— 70 µA
— 10 µA
— 0.5 V
—
VCC+
0.2 *⁶
V
(Continued)
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