MB84VD23381HJ Datasheet, PDF (35/56 Pages) SPANSION – 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM

MBVD23381HJ-70
3. ERASE AND PROGRAMMING PERFORMANCE (Flash)
Parameter
Value
Unit
Min
Typ
Max
Remarks
Sector Erase Time
—
0.5
2.0
s Excludes programming time prior to erasure
Word Programming Time —
6
100 µs Excludes system-level overhead
Chip Programming Time
—
25.2
95
s Excludes system-level overhead
Erase/Program Cycle
100,000 —
— cycle
Typical Erase conditions TA = +25°C, VCCf_1 & VCCf_2 = 2.9 V
Typical Program conditions TA = +25°C, VCCf_1 & VCCf_2 = 2.9 V
Data= Checker
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