MB84VD23381HJ Datasheet, PDF (52/56 Pages) SPANSION – 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM

MB84VD23381HJ-70
2. DATA RETENTION
• Low VCCr Characteristics (16M FCRAM)
Parameter
Symbol
Test Conditions
Min
VCCr Data Retention Supply Voltage
VDRs
CE1r = CE2r ≥ VCCr – 0.2 V or
CE1r = CE2r = VIH,
2.3
VCCr Data Retention Supply Current
VCCr = VCCr Max,
IDR1s VIN ≤ 0.2 V or VIN ≥ VCCr – 0.2V,
—
CE1r = CE2r ≥ VCCr – 0.2 V, IOUT = 0 mA
Max Unit
3.1
V
70 µs
Data Retention Setup Time
tDRSs VCCr = VCCr at data retention entry
0
—
ns
Data Retention Recovery Time
tDRRs VCCr = VCCr after data retention
100 —
ns
VCCr Voltage Transition Time
∆V/∆t
—
0.2 — V/µs
• Data Retention Timing (16M FCRAM)
3.1 V
2.7 V
VCCr
tDRS
∆V/∆t
tDRR
∆V/∆t
CE2r
2.3 V
CE1r
VIH > VCCr - 0.2 V
0.4 V
VSS
Data Retention Mode
Data bus must be in High-Z at data retention entry.
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