MB84VD23381HJ Datasheet, PDF (2/56 Pages) SPANSION – 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-50312-1E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
CMOS
64M (×16) FLASH MEMORY &
16M (×16) Mobile FCRAM^TM
MB84VD23381HJ-70
s FEATURES
• Power Supply Voltage of 2.7 V to 3.1 V
• High Performance
70 ns maximum random access time (Flash)
60 ns maximum random access time (FCRAM)
• Operating Temperature
–30 °C to +85 °C
• Package 56-ball BGA
s PRODUCT LINEUP
Flash
Supply Voltage (V)
Max Random Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
+0.1 V
VCCf* = 3.0 V _{–0.3 V}
70
70
30
* : Both VCCf and VCCr must be the same level when either part is being accessed.
s PACKAGE
56-ball plastic FBGA
(Continued)
FCRAM
+0.1 V
VCCr* = 3.0 V _{–0.3 V}
60
60
35
BGA-56P-M04