MB84VD23381HJ Datasheet, PDF (11/56 Pages) SPANSION – 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM

MBVD23381HJ-70
(Continued)
Parameter
Sym-
bol
Conditions
Value
Unit
Min Typ Max
Voltage for Sector Protection, and
Temporary Sector Unprotection
VID
(RESET) *⁴
—
11.5 12 12.5 V
Voltage for WP/ACC
Sector Protection/Unprotection and VACC
—
8.5 9.0 9.5 V
Program Acceleration *⁴
Output Low Voltage Level
VOLf VCCf = VCCf Min, IOL= 4.0 mA Flash —
VOLr VCCr = VCCr Min, IOL =1.0 mA FCRAM —
— 0.45 V
— 0.4 V
Output High Voltage Level
VOHf VCCf = VCCf Min, IOH=–2.0 mA Flash 2.4 — — V
VOHr VCCr = VCCr Min, IOH=–0.5mA FCRAM 2.2 — — V
Flash Low VCCf Lock-Out Voltage VLKO
—
2.3 2.4 2.5 V
*1 : The ICC current listed includes both the DC operating current and the frequency dependent component.
*2 : ICC active while Embedded Algorithm (program or erase) is in progress.
*3 : Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
*4 : Applicable for only VCCf applying.
*5 : Embedded Alogorithm (program or erase) is in progress (@5 MHz).
*6 : VCC indicates lower of VCCf or VCCr.
*7 : FCRAM Characteristics are mesured after following POWER-UP timing.
*8 : IOUT depends on the output load conditions.
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