SI8261AAC-C-IS Datasheet, PDF (9/40 Pages) Silicon Laboratories – 5 KV LED EMULATOR INPUT, 4.0 A ISOLATED GATE DRIVERS

Si826x
2. Regulatory Information
Table 3. Regulatory Information*
CSA
The Si826x is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.
61010-1: Up to 600 V_RMS reinforced insulation working voltage; up to 600 V_RMS basic insulation working voltage.
60950-1: Up to 1000 V_RMS reinforced insulation working voltage; up to 1000 V_RMS basic insulation working volt-
age.
60601-1: Up to 250 V_RMS reinforced insulation working voltage; up to 500 V_RMS basic insulation working voltage.
VDE
The Si826x is certified according to IEC60747 and VDE0884. For more details, see File 5006301-4880-0001.
60747-5-2: Up to 1414 V_peak for basic insulation working voltage.
VDE0884-10: Up to 1414 V_peak for reinforced insulation working voltage.
UL
The Si826x is certified under UL1577 component recognition program. For more details, see File E257455.
Rated up to 5000 V_RMS isolation voltage for basic protection.
CQC
The Si826x is certified under GB4943.1-2011. For more details, see certificates CQC14001104575,
CQC15001121282 and CQC15001121283.
Rated up to 1000 V_RMS reinforced insulation working voltage; up to 1000 V_RMS basic insulation working voltage.
*Note: Regulatory Certifications apply to 3.75 kV_RMS rated devices which are production tested to 4.5 kV_RMS for 1 sec.
Regulatory Certifications apply to 5.0 kV_RMS rated devices which are production tested to 6.0 kV_RMS for 1 sec.
For more information, see "8.Ordering Guide" on page 23.
Table 4. Insulation and Safety-Related Specifications
Parameter
Value
Symbol Test Condition
Unit
SOIC-8 DIP8 SDIP6 LGA8
Nominal Air Gap (Clearance) ^L(IO1)
4.7 min 7.2 min 9.6 min 10.0 min mm
Nominal External Tracking
(Creepage)
L(IO2)
3.9 min 7.0 min 8.3 min 10.0 min mm
Minimum Internal Gap
(Internal Clearance)
0.016 0.016 0.016 0.016 mm
Tracking Resistance
(Proof Tracking Index)
PTI
IEC60112
600
600
600
600
V
Erosion Depth
ED
0.031 0.031 0.057 0.021 mm
Resistance (Input-Output)*
R_IO
10¹²
10¹²
10¹²
10¹²

Capacitance (Input-Output)*
C_IO
f = 1 MHz
1
1
1
1
pF
*Note: To determine resistance and capacitance, the Si826x is converted into a 2-terminal device. Pins 1–4 (1–3, SDIP6) are
shorted together to form the first terminal, and pins 5–8 (4–6, SDIP6) are shorted together to form the second terminal.
The parameters are then measured between these two terminals.
Rev. 1.3
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