SI8261AAC-C-IS Datasheet, PDF (10/40 Pages) Silicon Laboratories – 5 KV LED EMULATOR INPUT, 4.0 A ISOLATED GATE DRIVERS

Si826x
Table 5. IEC 60664-1 (VDE 0884) Ratings
Parameter
Basic Isolation Group
Installation
Classification
Test Conditions
Material Group
Rated Mains Voltages <
150 V_RMS
Rated Mains Voltages <
300 V_RMS
Rated Mains Voltages <
450 V_RMS
Rated Mains Voltages <
600 V_RMS
Rated Mains Voltages <
1000 V_RMS
SOIC-8
I
I-IV
I-IV
I-III
I-III
I-II
Specification
DIP8
SDIP6
I
I
I-IV
I-IV
I-IV
I-IV
I-III
I-IV
I-III
I-IV
I-II
I-III
LGA8
I
I-IV
I-IV
I-IV
I-IV
I-III
Table 6. IEC 60747-5-2 (VDE 0884-10) Insulation Characteristics*
Parameter
Symbol
Test Condition
Characteristic
Unit
SOIC-8 DIP8 SDIP6 LGA8
Maximum Working
Insulation Voltage
V_IORM
630
891 1140 1414 V peak
Input to Output Test
Voltage
Method b1
(V_IORM x 1.875 = V_PR,
V_PR
100%
1181
Production Test, t_m = 1 sec,
Partial Discharge < 5 pC)
1671
2138
2652 V peak
Transient Overvoltage
Pollution Degree
(DIN VDE 0110, Table 1)
V_IOTM
t = 60 sec
6000
2
6000
2
8000
2
8000
2
V peak
Insulation Resistance at
T_S, V_IO = 500 V
R_S
>10⁹ >10⁹ >10⁹ >10⁹

*Note: This isolator is suitable for reinforced electrical isolation only within the safety limit data. Maintenance of the safety
data is ensured by protective circuits. The Si826x provides a climate classification of 40/125/21.
Table 7. IEC Safety Limiting Values*
Parameter
Symbol
Test Condition
SOIC-8
Max
DIP8 SDIP6
LGA8
Case Temperature
Input Current
Output Power
T_S
140
I_S _JA = 110 °C/W (SOIC-8),
370
110 °C/W (DIP8),
105 °C/W (SDIP6),
220 °C (LGA8),
V_F = 2.8 V, T_J = 140 °C,
T_A = 25 °C
P_S
1
140
140
140
370
390
185
1
1
0.5
*Note: Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 5, 6, 7, and 8.
Unit
°C
mA
W
10
Rev. 1.3