SI53360 Datasheet, PDF(3/15 Page) Silicon Laboratories – 1:8 LOW JITTER CMOS CLOCK BUFFER WITH 2:1 INPUT MUX

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SI53360 Datasheet, PDF (3/15 Pages) Silicon Laboratories – 1:8 LOW JITTER CMOS CLOCK BUFFER WITH 2:1 INPUT MUX

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Si53360

1. Electrical Specifications

Table 1. Recommended Operating Conditions

Parameter

Ambient Operating

Temperature

Supply Voltage Range

Symbol

VDD

Test Condition

LVCMOS

Min

Typ

Max Unit

â40

Â°C

1.71

1.8

1.89 V

2.38

2.5

2.63 V

2.97

3.3

3.63 V

Table 2. Input Clock Specifications

(VDD=1.8 V ï± 5%, 2.5 V ï± 5%, or 3.3 V ï± 10%, TA=â40 to 85 Â°C)

Parameter

LVCMOS Input High Volt-

age

LVCMOS Input Low Volt-

age

Input Capacitance

Symbol

VIH

VIL

CIN

Test Condition

VDD = 1.8 VÂ±5%, 2.5 Vï± 5%,

3.3 Vï± 10%

VDD = 1.8 VÂ±5%, 2.5 Vï± 5%,

3.3 Vï± 10%

CLK0 and CLK1 pins with

respect to GND

Min

VDD x 0.7

Typ

Max Unit

â VDD x 0.3 V

Table 3. DC Common Characteristics

(VDD = 1.8 V ï±ï 5%, 2.5 V ï± 5%, or 3.3 V ï±ï 10%,TA = â40 to 85 Â°C)

Parameter

Supply Current

Input High Voltage

Input Low Voltage

Internal Pull-up

Resistor

Symbol

IDD

VIH

VIL

RUP

Test Condition

CLK_SEL, OE

OE, CLK_SEL

Min

0.8 x VDD

Table 4. Output CharacteristicsâLVCMOS

(VDD = 1.8 V ï±ï 5%, 2.5 V ï± 5%, or 3.3 V ï±ï 10%,TA = â40 to 85 Â°C)

Parameter

Output Voltage High

Symbol

VOH

Output Voltage Low

VOL

Test Condition

IOH = â12 mA, VDD = 3.3 V

IOH = â9 mA, VDD = 2.5 V

IOH = â6 mA, VDD = 1.8 V

IOL = 12 mA, VDD = 3.3 V

IOL = 9 mA, VDD = 2.5 V

IOL = 6 mA, VDD = 1.8 V

Min

0.8 x VDD

Typ

Max

Unit

150

0.2 x VDD

kï

Typ

Max

Unit

0.2 x VDD

Rev. 1.1

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