HYB514265BJ-400 Datasheet, PDF (9/28 Pages) Siemens Semiconductor Group – 256K x 16-Bit EDO-Dynamic RAM

HYB 5(3)14265BJ(L)-400/-40/-45/-50
256K x 16 EDO-DRAM
Parameter
Output buffer turn-off delay from OE
Data to OE low delay
CAS high to data delay
OE high to data delay
Data to CAS low delay
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
Data to CAS low delay
Read-modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE command hold time
Hyper Page Mode (EDO) Cycle
Hyper page mode cycle time
Access time from CAS precharge
Output data hold time
RAS pulse width in hyper page mode
RAS hold time from CAS precharge
Symbol
Limit Values
Unit Note
-400
-40
min. max. min. max.
t_OEZ
0
t_DZO
0
t_CDD
8
t_ODD
8
t_DZC
0
10 0
–
0
–
8
–
8
–
0
10 ns 12
ns 13
–
ns 14
–
ns 14
–
ns 13
t_WCH
5
–
t_WP
5
–
t_WCS
0
–
t_RWL
10
–
t_CWL
10
–
t_DS
0
–
t_DH
5
–
t_DZC
0
–
5
–
5
–
0
–
10 –
10 –
0
–
5
–
0
–
ns
ns
ns 15
ns
ns
ns 16
ns 16
ns 13
t_RWC
93
–
t_RWD
52
–
t_CWD
22
–
t_AWD
32
–
t_OEH
5
–
93 –
52 –
22 –
32 –
5
–
ns
ns 15
ns 15
ns 15
ns
t_HPC
t_CPA
t_COH
t_RAS
t_RHCP
12.5 –
15
–
17 –
3
–
3
40 200k 40
17 –
21
–
ns
21 ns 7
–
ns
200k ns
–
ns
Semiconductor Group
9