HYB514265BJ-400 Datasheet, PDF (12/28 Pages) Siemens Semiconductor Group – 256K x 16-Bit EDO-Dynamic RAM

AC Characteristics (cont’d) ⁵⁾⁶⁾
T_A = 0 to 70 ˚C, t_T = 2 ns
Parameter
Output buffer turn-off delay
Output turn-off delay from OE
Data to CAS low delay
Data to OE low delay
CAS high to data delay
OE high to data delay
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
Read-modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE command hold time
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle time
Access time from CAS precharge
Output data hold time
RAS pulse width in EDO mode
CAS precharge to RAS Delay
HYB 5(3)14265BJ(L)-400/-40/-45/-50
256K x 16 EDO-DRAM
16E
Symbol
Limit Values
Unit Note
-45
-50
min. max. min. max.
t_OFF
0
12 0
13 ns 12
t_OEZ
0
12 0
13 ns 12
t_DZC
0
–
0
–
ns 13
t_DZO
0
–
0
–
ns 13
t_CDD
10
–
10 –
ns 14
t_ODD
10
–
10 –
ns 14
t_WCH
7
–
t_WP
7
–
t_WCS
0
–
t_RWL
12
–
t_CWL
12
–
t_DS
0
–
t_DH
7
–
8
–
8
–
0
–
13 –
13 –
0
–
8
–
ns
ns
ns 15
ns
ns
ns 16
ns 16
t_RWC
t_RWD
t_CWD
t_AWD
t_OEH
107 –
59 –
26 –
36 –
7
–
118 –
64 –
27 –
39 –
10 –
ns
ns 15
ns 15
ns 15
ns
t_HPC
18
t_CPA
–
t_COH
5
t_RAS
45
t_RHPC 25
–
20
25 –
–
5
200k 50
–
27
–
ns
27 ns 7
–
ns
200k ns
–
ns
Semiconductor Group
12