HYB514265BJ-400 Datasheet, PDF (8/28 Pages) Siemens Semiconductor Group – 256K x 16-Bit EDO-Dynamic RAM

AC Characteristics ^{5) 6)}
T_A = 0 to 70 °C, t_T = 2 ns
Parameter
Common Parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
CAS precharge time
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delaytime
RAS to column address delay time
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time(rise and fall)
Refresh period
Read Cycle
Access time from RAS
Access time from CAS
Access time from column address
OE access time
Column address to RAS lead time
Read command setup time
Read command hold time
Read command hold time ref. to RAS
CAS to output inlow-Z
Output buffer turn-off delay from CAS
Semiconductor Group
HYB 5(3)14265BJ(L)-400/-40/-45/-50
256K x 16 EDO-DRAM
Symbol
Limit Values
Unit Note
-400
-40
min. max. min. max.
t_RC
69 –
69 –
ns
t_RP
25 –
25 –
ns
t_RAS
40 10k 40 10k ns
t_CAS
4.5 10k 6
10k ns
t_CP
4
–
5
–
ns
t_ASR
0
–
0
–
ns
t_RAH
5
–
5
–
ns
t_ASC
0
–
0
–
ns
t_CAH
5
–
5
–
ns
t_RCD
9
30 9
30 ns
t_RAD
7
20 7
20 ns
t_RSH
6
–
6
–
ns
t_CSH
32 –
32 –
ns
t_CRP
5
–
5
–
ns
t_T
1
50 1
50 ns 7
t_REF
16 –
16 –
ms
t_RAC
–
40 –
40 ns 8, 9
t_CAC
–
10 –
10 ns 8, 9
t_AA
–
17 –
20 ns 8,10
t_OEA
–
10 –
10 ns
t_RAL
20 –
20 –
ns
t_RCS
0
–
0
–
ns
t_RCH
0
–
0
–
ns 11
t_RRH
0
–
0
–
ns 11
t_CLZ
0
–
0
–
ns 8
t_OFF
0
–
0
10 ns 12
8