HYB514265BJ-400 Datasheet, PDF (6/28 Pages) Siemens Semiconductor Group – 256K x 16-Bit EDO-Dynamic RAM

HYB 5(3)14265BJ(L)-400/-40/-45/-50
256K x 16 EDO-DRAM
Parameter
Average V_CC supply current during
hyper page mode (EDO) operation: -400 version
-40 version
-45 version
-50 version
Standby V_CC supply current
(RAS = LCAS = UCAS = WE = V_CC – 0.2 V)
Standby V_CC supply current (L-version only)
(RAS = LCAS = UCAS = WE = V_CC – 0.2 V)
Average V_CC supply current during
CAS-before-RAS refresh mode: -400 version
-40 version
-45 version
-50 version
Symbol Limit Values
min. max.
I_CC4
–
110
90
75
65
I_CC5
–
1
I_CC5
–
200
I_CC6
–
120
120
105
95
Unit Notes
mA ^{2, 3, 4}
mA 1
µA 1
mA ^{2, 4}
DC Characteristics for 314265
T_A = 0 to 70 °C; V_SS = 0 V; V_CC = 3.3 V ± 0.3 V, t_T = 2 ns
Parameter
Symbol Limit Values
min.
max.
Unit Test
Condition
Input high voltage
V_IH
Input low voltage
V_IL
TTL Output high voltage (I_OUT = – 2.0 mA)
V_OH
TTL Output low voltage (I_OUT = 2 mA)
V_OL
CMOS Output high voltage (I_OUT = – 100 µA) V_OH
CMOS Output low voltage (I_OUT = 100 µA)
V_OL
Input leakage current, any input
I_I(L)
(0 V < V_IN < V_CC + 0.3 V, all other inputs = 0 V)
Output leakage current
I_O(L)
(DO is disabled, 0 V < V_OUT < V_CC + 0.3 V)
Average V_CC supply current:
I_CC1
-45 version
-50 version
2.0
– 0.5
2.4
–
2.4
–
– 10
– 10
–
V_CC + 0.5 V 1
0.8
V1
–
V1
0.4
V1
–
V1
0.4
V1
10
µA 1
10
µA 1
105
mA ^{2, 3, 4}
95
Standby V_CC supply current
(RAS = LCAS = UCAS = WE = V_IH)
I_CC2
–
2
mA –
Semiconductor Group
6