HYB514265BJ-400 Datasheet, PDF (1/28 Pages) Siemens Semiconductor Group – 256K x 16-Bit EDO-Dynamic RAM

256K x 16-Bit EDO-Dynamic RAM
HYB 514265BJ-400/40/-45/-50
HYB 314265BJ(L)-45/-50
Preliminary Information
• 262 144 words by 16-bit organization
• Power Supply:
• 0 to 70 °C operating temperature
• EDO - Hyper Page Mode
• Performance:
-400 -40 -45 -50
t_rc
69 69 79 89 ns
t_rac
40 40 45 50 ns
t_cac
10
10 12
13 ns
t_aa
20 20 22 25 ns
t_hpc 12,5 15
18
20 ns
t_hpc
80
66
55
50 MHz
• Low Power dissipation
- Active(max.):
120mA / 120mA / 105mA / 95 mA
- Standby : TTL Inputs (max.) 2.0 mA
- Standby: CMOS Inputs (max.) 1.0 mA
- Standby (L-version)
200 µA
HYB 514265BJ-400 +5 V ±5%
HYB 514265BJ-40 +5 V ±10%
HYB 514265BJ-45 +5 V ±10%
HYB 514265BJ-50 +5 V ±10%
HYB 314265BJ(L)-45 +3.3 V ±0.3 V
HYB 314265BJ(L)-50 +3.3 V ±0.3 V
• Read, write, read-modify-write, CAS -before
RAS refresh, RAS only refresh, hidden refresh
mode
• Low Power Version (L) with Self Refresh
and 250 µA self refresh current
• 2 CAS / 1 WE control
• All inputs and outputs TTL-compatible
• 512 refresh cycles / 16 ms
512 refresh cycles / 128 ms (L-version)
• Plastic Packages: P-SOJ-40-3 400 mil width
The HYB 5(3)14265BJ(L) is the new generation dynamic RAM organized as 262 144 words by
16-bit. The HYB 5(3)14265BJ(L) utilizes the SIEMENS 16M-CMOS submicron silicon gate process
as well as advanced circuit techniques to provide wide operation margins, both internally and for the
system user. Multiplexed address inputs permit the HYB 5(3)14265BJ(L) to be packed in a
standard plastic 400mil wide P-SOJ-40-3 package. This package size provides high system bit
densities and is compatible with commonly used automatic testing and insertion equipment.
The HYB314265BJL parts have a very low power “sleep mode“ supported by Self Refresh.
Semiconductor Group
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