HYB514265BJ-400 Datasheet, PDF (2/28 Pages) Siemens Semiconductor Group – 256K x 16-Bit EDO-Dynamic RAM

HYB 5(3)14265BJ(L)-400/-40/-45/-50
256K x 16 EDO-DRAM
Ordering Information
Type
5 V versions:
HYB 514265BJ-400
HYB 514265BJ-40
HYB 514265BJ-45
HYB 514265BJ-50
3.3 V versions:
HYB 314265BJ-45
HYB 314265BJ-50
HYB 314265BJL-45
HYB 314265BJL-50
Ordering
Code
Package
Q67100-3033 P-SOJ-40-3
Q67100-3039 P-SOJ-40-3
Q67100-3035 P-SOJ-40-3
Q67100-3036 P-SOJ-40-3
on request
on request
on request
on request
P-SOJ-40-3
P-SOJ-40-3
P-SOJ-40-3
P-SOJ-40-3
Description
5 V 40 ns 256 K x 16 EDO-DRAM
5 V 40 ns 256 K x 16 EDO-DRAM
5 V 45 ns 256 K x 16 EDO-DRAM
5 V 50 ns 256 K x 16 EDO-DRAM
3.3 V 45 ns 256 K x 16 EDO- DRAM
3.3 V 50 ns 256 K x 16 EDO- DRAM
3.3 V Low Power 45 ns 256 K x 16 EDO- DRAM
3.3 V Low Power 50 ns 256 K x 16 EDO-DRAM
Truth Table
RAS LCAS UCAS WE
OE
I/O1-I/O8
I/O9-I/O16 Operation
H
H
H
H
H
High-Z
High-Z
Standby
L
H
H
H
H
High-Z
High-Z
Refresh
L
L
H
H
L
Dout
High-Z
Lower byte read
L
H
L
H
L
High-Z
Dout
Upper byte read
L
L
L
H
L
Dout
Dout
Word read
L
L
H
L
H
Din
Don't care Lower byte write
L
H
L
L
H
Don't care Din
Upper byte write
L
L
L
L
H
Din
Din
Word write
L
L
L
H
H
High-Z
High-Z
Pin Names
A0-A8
RAS
UCAS, LCAS
WE
OE
I/O1 – I/O16
V_CC
V_SS
N.C.
Address Inputs
Row Address Strobe
Column Address Strobe
Read/Write Input
Output Enable
Data Input/Output
Power Supply:
+ 5 V for HYB 514265,
+ 3.3 V for HYB 314265
Ground (0 V)
No Connection
Semiconductor Group
2