HYB514100BJ-50- Datasheet, PDF (7/21 Pages) Siemens Semiconductor Group – 4M x 1-Bit Dynamic RAM

HYB 514100BJ-50/-60
4M × 1 DRAM
AC Characteristics (cont’d) ^{5, 6}
T_A = 0 to 70 °C, V_CC = 5 V ± 10 %, t_T = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
Fast Page Mode Cycle
Fast page mode cycle time
CAS precharge time
Access time from CAS precharge
RAS pulse width
CAS precharge to RAS Delay
t_PC
t_CP
t_CPA
t_RAS
t_RHCP
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle time
CAS precharge to WE
t_PRWC
t_CPWD
CAS-before-RAS Refresh Cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS
t_CSR
t_CHR
t_RPC
t_WRP
t_WRH
CAS-before-RAS Counter Test Cycle
CAS precharge time
t_CPT
Test Mode
Write command setup time
t_WTS
Write command hold time
t_WTH
35 –
40 –
ns
10 –
10 –
ns
–
30 –
35 ns ⁷
50 200k 60 200k ns
30 –
35 –
ns
55 –
60 –
ns
30 –
35 –
ns
10 –
10 –
ns
10 –
10 –
ns
5–
5–
ns
10 –
10 –
ns
10 –
10 –
ns
35 –
40 –
ns
10 –
10 –
ns
10 –
10 –
ns
Semiconductor Group
7
1998-10-01