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HYB514100BJ-50- Datasheet, PDF (18/21 Pages) Siemens Semiconductor Group – 4M x 1-Bit Dynamic RAM
HYB 514100BJ-50/-60
4M × 1 DRAM
VIH
RAS
VIL
VIH
CAS
VIL
t ASR
VIH
A0 - A10
VIL
t RC
t RAS
t RCD
t RSH
t RAD
t ASC
t RAH
t CAH
Row
Addr
t WCS
Column
Address
VIH
WE
VIL
DI
VIN
(Input) VIL
t WCH
t WP
t DS
t DH
Valid Data
DO
VOH
(Output) VOL
"H" or "L"
t RC
t RP
t RAS
t RP
t CHR
t CRP
t ASR
Row
Address
Hi Z
SPT03022
Hidden Refresh Cycle (Early Write)
Semiconductor Group
18
1998-10-01