HYB514100BJ-50- Datasheet, PDF (1/21 Pages) Siemens Semiconductor Group – 4M x 1-Bit Dynamic RAM

4M × 1-Bit Dynamic RAM
HYB 514100BJ-50/-60
Advanced Information
• 4 194 304 words by 1-bit organization
• 0 to 70 °C operating temperature
• Fast Page Mode Operation
• Performance:
t_RAC RAS access time
t_CAC CAS access time
t_AA Access time from address
t_RC Read/Write cycle time
t_PC Fast page mode cycle time
-50 -60
50 60 ns
13 15 ns
25 30 ns
95 110 ns
35 40 ns
• Single + 5 V (± 10 %) supply with a built-in V_BB generator
• Low power dissipation
max. 660 mW active (-50 version)
max. 605 mW active (-60 version)
• Standby power dissipation:
11 mW max. standby (TTL)
5.5 mW max. standby (CMOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
• All inputs and outputs TTL-compatible
• 1024 refresh cycles/16 ms
• Plastic Packages: P-SOJ-26/20-2 with 300 mil width
Semiconductor Group
1
1998-10-01