HYB514100BJ-50- Datasheet, PDF (4/21 Pages) Siemens Semiconductor Group – 4M x 1-Bit Dynamic RAM

HYB 514100BJ-50/-60
4M × 1 DRAM
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70 °C
Storage temperature range.................................................................................... – 55 to + 150 °C
Input/output voltage ....................................................................................................... – 1 to + 7 V
Power Supply voltage .................................................................................................... – 1 to + 7 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
T_A = 0 to 70 °C, V_SS = 0 V, V_CC = 5 10 %, t_T = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Unit Test
Condition
Input high voltage
V_IH
Input low voltage
V_IL
Output high voltage (I_OUT = – 5 mA)
V_OH
Output low voltage (I_OUT = 4.2 mA)
V_OL
Input leakage current, any input
I_I(L)
(0 V < V_IN < 7, all other input = 0 V)
Output leakage current
I_O(L)
(DO is disabled, 0 < V_OUT < V_CC)
Average V_CC supply current
I_CC1
-50 version
-60 version
2.4
– 1.0
2.4
–
– 10
– 10
–
–
V_CC + 0.5 V ¹
0.8
V
1
–
V
1
0.4
V
1
10
µA ¹
10
µA ¹
120
mA ^{2, 3}
110
mA
Standby V_CC supply current
(RAS = CAS = WE = V_IH)
I_CC2
–
Average V_CC supply current during RAS-only I_CC3
refresh cycles
-50 version
–
-60 version
–
2
mA
120
mA ²
110
mA
Average V_CC supply current during fast page I_CC4
mode operation
-50 version
–
-60 version
–
80
mA ^{2, 3}
70
mA
Semiconductor Group
4
1998-10-01