HYB514100BJ-50- Datasheet, PDF (2/21 Pages) Siemens Semiconductor Group – 4M x 1-Bit Dynamic RAM

HYB 514100BJ-50/-60
4M × 1 DRAM
The HYB 514100BJ is the new generation dynamic RAM organized as 4 194 304 words by 1-bit.
The HYB 514100BJ utilizes CMOS silicon gate process as well as advances circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 514100BJ to be packed in a standard plastic P-SOJ-26/20 package. This package
size provides high system bit densities and is compatible with commonly used automatic testing and
insertion equipment. System oriented features include single + 5 V (± 10 %) power supply, direct
interfacing with high performance logic device families such as Schottky TTL.
Type
HYB 514100BJ-50
HYB 514100BJ-60
Ordering Code
Q67100-Q971
Q67100-Q759
Package
P-SOJ-26/20-2 300 mil
P-SOJ-26/20-2 300 mil
Descriptions
DRAM (access time 50 ns)
DRAM (access time 60 ns)
P-SOJ-26/20-2
DI 1
WE 2
RAS 3
N.C. 4
A10 5
26 V _SS
25 DO
24 CAS
23 N.C.
22 A9
A0 9
A1 10
A2 11
A3 12
V _CC 13
Pin Configuration
Pin Names
A0 – A10 Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Read/Write Input
DI
Data In
DO
Data Out
V_CC
V_SS
N.C.
Power Supply (+ 5 V)
Ground (0 V)
No Connection
18 A8
17 A7
16 A6
15 A5
14 A4
SPP02808
Semiconductor Group
2
1998-10-01