SAB88C166 Datasheet, PDF (28/58 Pages) Siemens Semiconductor Group – 16-Bit CMOS Single-Chip Microcontrollers with/without oscillator prescaler with 32 KByte Flash EPROM

SAB 88C166(W)
To avoid this possible malfunction, the user must equalize the amount of charge on each cell by
programming all cells of one block to ‘0’ before performing a block erasure.
Figure 10
Flash Memory Cell Erase Mechanism
The introduced erase algorithm meets this requirement. In combination with the Flash technology
used, it provides a tight threshold voltage distribution, generating a sufficient margin even to cells
erasing faster than others.
Figure 11
Flash Erasure
Note that the following terminology is used in this document: Flash WRITING means changing the
state of the floating gate. Flash PROGRAMMING means loading electrons onto the floating gate.
Flash ERASING means removing electrons from the floating gate.
Semiconductor Group
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