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K4E660812E Datasheet, PDF (9/21 Pages) Samsung semiconductor – 8M x 8bit CMOS Dynamic RAM with Extended Data Out
K4E660812E,K4E640812E
READ CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VOH -
VOL -
tR C
tRAS
tC R P
tRCD
tCSH
tRSH
tCAS
tASR
tRAD
tRAH
tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tR A L
tRCS
OPEN
tRAC
tA A
tO E A
tOLZ
tCAC
tCLZ
tR P
tCRP
tRRH
tR C H
tCEZ
tO E Z
tWEZ
tREZ
DATA-OUT
Don′t care
Undefined