K4E660812E Datasheet, PDF (14/21 Pages) Samsung semiconductor – 8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812E,K4E640812E
HYPER PAGE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
VIH -
RAS
VIL -
tRASP
¡ó
tRP
tRHCP
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
tC R P
tASR
tR C D
tRAD
tRAH
tC S H
tASC
tH P C
tCAS
tCAH
ROW
ADDR.
COLUMN
ADDRESS
tHPC
tC P
tCP
tCAS
¡ó
tRSH
tCAS
tASC
tCAH
COLUMN
ADDRESS
tASC tCAH
¡ó
COLUMN
ADDRESS
¡ó
tRAL
tWCS tW C H
tWCS
tW C H
tWCS tWCH
tWP
tWP
¡ó
tW P
tC W L
tCWL
¡ó
¡ó
tCWL
tRWL
DQ0 ~ DQ3(7)
VIH -
VIL -
tDS
tDH
VALID
DATA-IN
tD S tD H
tDS tD H
VALID
¡ó
VALID
DATA-IN
DATA-IN
¡ó
Don′t care
Undefined