K4E660812E Datasheet, PDF (16/21 Pages) Samsung semiconductor – 8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812E,K4E640812E
HYPER PAGE READ AND WRITE MIXED CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VI/OH -
VI/OL -
READ( tCAC)
tRASP
R E A D (t CPA)
WRITE
tR P
R E A D (tAA )
tRAD
tRAH
tASR
tASC
tCAS
tCAH
ROW
ADDR
COLUMN
ADDRESS
tHPC
tCP
tCAS
tASC
COLUMN
ADDRESS
tCAH
tH P C
tCP
tASC
tCAS
tC A H
COL.
ADDR
tRCS
tRCH tRCS
tRCH
tWCH
tWCS
tR H C P
tHPC
tC P
tCAS
tASC tCAH
COL.
ADDR
tRAL
tRCH
tWPE
tC P A
tCLZ
tW E D
tOEA
tCAC
tAA
tRAC
tWEZ
VALID
DATA-OUT
tWEZ
VALID
DATA-OUT
tDH
tD S
VALID
DATA-IN
tAA
tCLZ
tREZ
VALID
DATA-OUT
Don′t care
Undefined