K4E660812E Datasheet, PDF (13/21 Pages) Samsung semiconductor – 8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812E,K4E640812E
HYPER PAGE READ CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
tRASP
tCRP
tCSH
tRCD
tHPC
tC P
tCAS
¡ó
tHPC
tC P
tCAS
tRHCP
tHPC
tC P
tCAS
tCAS
tASR
tRAD
tRAH tASC
tCAH tASC tCAH tASC
tCAH tASC tCAH
ROW
ADDR
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
ADDR
COLUMN
ADDRESS
tRP
tREZ
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VOH -
VOL -
tRCS
tRAL
tRCH
tRRH
tCPA
tC A C
tCAC
tC A C
tAA
tCPA
tAA
tAA
tCPA
tA A
tO C H
tCHO
tOEP
tOEA
tOEA
tRAC
tCAC
tDOH
tOEP
tOEZ
VALID
DATA-OUT
tOLZ
tCLZ
VALID
DATA-OUT
tOEZ
tOEA
VALID
DATA-OUT
tO E Z
VALID
DATA-OUT
Don′t care
Undefined