K4E660812E Datasheet, PDF (15/21 Pages) Samsung semiconductor – 8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812E,K4E640812E
HYPER PAGE READ-MODIFY-WRITE CYCLE
CMOS DRAM
VIH -
RAS
VIL -
tCSH
tRASP
tRP
tRSH
tC R P
VIH -
CAS
VIL -
tRCD
tRAD
tRAH
VIH -
A
VIL -
tASR
tASC
ROW
ADDR
COL.
ADDR
tCAS
tC A H
tR C S
tC W L
tH P R W C
tCP
tCAS
tASC
tCAH
COL.
ADDR
tRAL
tRWL
tCWL
tC R P
VIH -
W
VIL -
tWP
tCWD
tAWD
tRWD
tCWD
tAWD
tCPWD
tW P
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VI/OH -
VI/OL -
tOEA
tO E A
tCAC
tAA
tRAC
tOED
tO E Z
tDH
tD S
tCAC
tA A
tOED
tOEZ
tDH
tDS
tCLZ
tOLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
tOLZ
VALID
DATA-OUT
VALID
DATA-IN
Don′t care
Undefined