K4E660812E Datasheet, PDF (3/21 Pages) Samsung semiconductor – 8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812E,K4E640812E
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Symbol
VIN, VO U T
Rating
-0.5 to +4.6
Units
V
Voltage on VC C supply relative to VSS
VCC
-0.5 to +4.6
V
Storage Temperature
Tstg
-55 to +150
°C
Power Dissipation
PD
1
W
Short Circuit Output Current
IOS Address
50
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Supply Voltage
VCC
3.0
3.3
3.6
Ground
VS S
0
0
0
Input High Voltage
VIH
2.0
Input Low Voltage
V IL
-0.3 ^{* 2}
*1 : Vcc+1.3V at pulse width≤15ns which is measured at VC C
*2 : -1.3 at pulse width≤15ns which is measured at V SS
-
Vcc+0.3^*1
-
0.8
Units
V
V
V
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Input Leakage Current (Any input 0≤VIN≤VCC+0.3V,
all other pins not under test=0 Volt)
II(L)
-5
Max
5
Units
uA
Output Leakage Current
(Data out is disabled, 0V≤VOUT≤VCC )
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-2mA)
Output Low Voltage Level(IOL =2mA)
VOH
2.4
VO L
-
-
V
0.4
V