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| K4E660812E Datasheet, PDF (20/21 Pages) Samsung semiconductor – 8M x 8bit CMOS Dynamic RAM with Extended Data Out | |||
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K4E660812E,K4E640812E
CAS - BEFORE - RAS SELF REFRESH CYCLE
NOTE : OE, A = Don â²t care
CMOS DRAM
VIH -
RAS
VIL -
VIH -
CAS
VIL -
DQ0 ~ DQ3(7)
VOH -
VOL -
VIH -
W
VIL -
tRP
tRPC
tCP
tCSR
tC E Z
tW R P
tWRH
tRASS
tRPS
tCHS
tRPC
OPEN
TEST MODE IN CYCLE
NOTE : OE , A = Don â²t care
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
W
VIL -
DQ0 ~ DQ3(7)
VOH -
VOL -
tRP
tR P C
tCP
tCSR
tCHR
tW T S
tWTH
tOFF
tR C
tR A S
OPEN
tR P
tRPC
Donâ²t care
Undefined
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